113 Results for : amplifying

  • Thumbnail
    DN3545N8-G - MOSFET, N-CH, TO-89, 450 V, 0,2 A, 1,6 W
    These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 450 V• RDS: 20 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
  • Thumbnail
    DN2540N3-G - MOSFET, N-Kanal, 400 V, 0,15 A, Rds(on) 17 Ohm, TO-92
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 0.98 EUR excl. shipping
  • Thumbnail
    DN2540N5-G - MOSFET, N-CH, TO-220, 400 V, 0,15 A, 15 W
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 1.80 EUR excl. shipping
  • Thumbnail
    DN2450K4-G - MOSFET, N-CH, DPAK, 500 V, 0,7 A, 2,5 W
    These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 500 V• Ugs (off): -1,5 ... 3,5 V• RDS: 10 Ohm• Ic: 700 mA
    • Shop: reichelt elektronik
    • Price: 0.57 EUR excl. shipping
  • Thumbnail
    Amplifying that still small voice
    Amplifying that still small voice ab 11.99 € als epub eBook: . Aus dem Bereich: eBooks, Belletristik, Erzählungen,
    • Shop: hugendubel
    • Price: 11.99 EUR excl. shipping
  • Thumbnail
    Own It! Honouring and Amplifying Accountability
    Own It! Honouring and Amplifying Accountability ab 9.99 € als epub eBook: . Aus dem Bereich: eBooks, Wirtschaft,
    • Shop: hugendubel
    • Price: 9.99 EUR excl. shipping
  • Thumbnail
    Recognize!: An Anthology Honoring and Amplifying Black Life
    Recognize!: An Anthology Honoring and Amplifying Black Life ab 11.49 € als Taschenbuch: . Aus dem Bereich: Bücher, English, International, Englische Taschenbücher,
    • Shop: hugendubel
    • Price: 11.49 EUR excl. shipping
  • Thumbnail
    The Voice of Witness Reader: Ten Years of Amplifying Unheard Voices
    The Voice of Witness Reader: Ten Years of Amplifying Unheard Voices ab 53.99 € als gebundene Ausgabe: . Aus dem Bereich: Bücher, Wissenschaft, Jura,
    • Shop: hugendubel
    • Price: 53.99 EUR excl. shipping
  • Thumbnail
    The Voice of Witness Reader: Ten Years of Amplifying Unheard Voices
    The Voice of Witness Reader: Ten Years of Amplifying Unheard Voices ab 30.49 € als Taschenbuch: . Aus dem Bereich: Bücher, Taschenbücher, Wirtschaft & Soziales,
    • Shop: hugendubel
    • Price: 30.49 EUR excl. shipping
  • Thumbnail
    The role of PV in amplifying the voices of marginalised communities
    The role of PV in amplifying the voices of marginalised communities ab 39.99 € als Taschenbuch: Lessons From Iran. Aus dem Bereich: Bücher, Wissenschaft, Politikwissenschaft,
    • Shop: hugendubel
    • Price: 39.99 EUR excl. shipping

Similar searches: