77 Results for : to247

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    IDW40G65C5B - SiC-Dual-Schottkydiode, 650V, 40A (2x20), TO247
    5. Generation thinQ!™ SiC Schottky DiodeDie 5. Generation ThinQ!™ repräsentiert die Spitzentechnologie von Infineon für die SiC Schottky Barrieredioden. Das bereits mit G3 eingeführte Infineon-eigene Diffusionslötverfahren wird nun mit einem neuen, kompakteren Design und einer Dünnwafer-Technologie kombiniert. Das Ergebnis ist eine neue Produktfamilie mit verbessertem Wirkungsgrad über alle Lastbedingungen, die sowohl auf die verbesserten thermischen Eigenschaften als auch auf einen niedrigeren Leistungswert (Qc x Vf) zurückzuführen ist. Die neue thinQ!™ Generation 5 wurde als Ergänzung zur 650V CoolMOS™ Familien entwickelt: Dies gewährleistet die Erfüllung höchster Anwendungsanforderungen in diesem Spannungsbereich.Merkmale• revolutionäres Halbleitermaterial - Siliziumkarbid• hervorragendens Schaltverhalten• keine Rückwärtswiederherstellung / keine Vorwärtswiederherstellung• positiver Temperaturkoeffizient• hohe Stoßstromfestigkeit• bleifreie Verbleiung; RoHS-konform• qualifiziert nach JEDEC• Durchschlagsspannung geprüft bei 11 mA2)• optimiert für den HochtemperaturbetriebVorteile• verbesserung der Systemeffizienz gegenüber Si-Dioden• Systemkosten-/Größeneinsparungen durch reduzierten Kühlbedarf• ermöglicht Lösungen mit höherer Frequenz / erhöhter Leistungsdichte• höhere Systemzuverlässigkeit durch niedrigere Betriebstemperaturen• reduzierte EMIAnwendungen• Schaltnetzteile• Leistungsfaktorkorrektur• Solarwechselrichter• unterbrechungsfreie Stromversorgung
    • Shop: reichelt elektronik
    • Price: 16.90 EUR excl. shipping
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    STW26NM60N - MOSFET N-Ch 600V 20A 140W 0,165R TO247
    N-channel 600 V, 0.135 O typ., 20 A MDmesh™ II Power MOSFETFeatures100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 2.34 EUR excl. shipping
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    STW28NM50N - MOSFET N-Ch 500V 21A 150W 0,158R TO247
    N-channel 500 V, 0.135 O, 21 A MDmesh™ II Power MOSFETFeatures100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 2.56 EUR excl. shipping
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    STW42N65M5 - MOSFET N-Ch 650V 33A 190W 0,079R TO247
    N-channel 650 V, 0.070 O, 33 A MDmesh™ V Power MOSFETFeaturesTO-220 worldwide best RDS(on)Higher VDSS ratingHigh dv/dt capabilityExcellent switching performanceEasy to drive100% avalanche testedApplicationSwitching applications
    • Shop: reichelt elektronik
    • Price: 8.73 EUR excl. shipping
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    IPW60R099C7 - MOSFET N-Ch 600V 22A 110W 0,099R TO247
    600V CoolMOS™ C7 Power MOSFETFeatures• Suitable for hard and soft switching (PFC and high performance LLC)• Increased MOSFET dv/dt ruggedness to 120V/ns• Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg• Best in class RDS(on) /package• Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)Benefits• Increased economies of scale by use in PFC and PWM topologies in the application• Higher dv/dt limit enables faster switching leading to higher efficiency• Enabling higher system efficiency by lower switching losses• Increased power density solutions due to smaller packages• Suitable for applications such as server, telecom and solar• Higher switching frequencies possible without loss in efficiency due to low Eoss and QgApplicationsPFC stages and PWM stages (TTF, LLC) for high power/performanceSMPS e.g. Computing, Server, Telecom, UPS and Solar.
    • Shop: reichelt elektronik
    • Price: 4.55 EUR excl. shipping
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    IPW60R125C6 - MOSFET N-Ch 600V 30A 219W 0,125R TO247
    600V CoolMOS™ C6 Power MOSFETFeatures:Easy control of switching behaviorExtremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss)Very high commutation ruggednessEasy to useBetter light load efficiency compared to C3Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggednessBetter price performance in comparison to previous CoolMOS™ generationsMore efficient, more compact, lighter and coolerBenefits:Improved power densityImproved reliabilityGeneral purpose part can be used in both soft and hard switching topologiesBetter light load effciencyImproved effciency in hard switching applicationsImproved ease-of-useReduces possible ringing due to pcb layout and package parasitic effectsApplications:ConsumerAdaptereMobilityPFC stages for server & telecomSMPSPC powerSolarLighting
    • Shop: reichelt elektronik
    • Price: 8.60 EUR excl. shipping
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    IPW60R180C7 - MOSFET N-Ch 600V 13A 68W 0,18R TO247
    600V CoolMOS™ C7 Power MOSFETFeatures• Suitable for hard and soft switching (PFC and high performance LLC)• Increased MOSFET dv/dt ruggedness to 120V/ns• Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg• Best in class RDS(on) /package• Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)Benefits• Increased economies of scale by use in PFC and PWM topologies in the application• Higher dv/dt limit enables faster switching leading to higher efficiency• Enabling higher system efficiency by lower switching losses• Increased power density solutions due to smaller packages• Suitable for applications such as server, telecom and solar• Higher switching frequencies possible without loss in efficiency due to low Eoss and QgApplicationsPFC stages and PWM stages (TTF, LLC) for high power/performanceSMPS e.g. Computing, Server, Telecom, UPS and Solar.
    • Shop: reichelt elektronik
    • Price: 2.71 EUR excl. shipping
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    IPW60R190E6 - MOSFET N-Ch 600V 20,2A 151W 0,19R TO247
    600V CoolMOS™ E6 Power MOSFETFeatures• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• JEDEC1) qualified, Pb-free plating, Halogen freeApplicationsPFC stages, hard switching PWM stages and resonant switchingPWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,Lighting, Server, Telecom and UPS.
    • Shop: reichelt elektronik
    • Price: 3.00 EUR excl. shipping
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    IPW60R280C6 - MOSFET N-Ch 600V 13,8A 104W 0,28R TO247
    600V CoolMOS™ C6 Power MOSFETFeatures:Easy control of switching behaviorExtremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss)Very high commutation ruggednessEasy to useBetter light load efficiency compared to C3Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggednessBetter price performance in comparison to previous CoolMOS™ generationsMore efficient, more compact, lighter and coolerBenefits:Improved power densityImproved reliabilityGeneral purpose part can be used in both soft and hard switching topologiesBetter light load effciencyImproved effciency in hard switching applicationsImproved ease-of-useReduces possible ringing due to pcb layout and package parasitic effectsApplications:ConsumerAdaptereMobilityPFC stages for server & telecomSMPSPC powerSolarLighting
    • Shop: reichelt elektronik
    • Price: 2.30 EUR excl. shipping
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    IPW65R045C7 - MOSFET N-Ch 650V 46A 227W 0,045R TO247
    650V CoolMOS™ C7 Power MOSFETFeatures• Increased MOSFET dv/dt ruggedness• Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg• Best in class RDS(on) /package• Easy to use/drive• Pb-free plating, halogen free mold compound• Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)Benefits• Enabling higher system efficiency• Enabling higher frequency / increased power density solutions• System cost / size savings due to reduced cooling requirements• Higher system reliability due to lower operating temperaturesApplicationsPFC stages and hard switching PWM stages for e.g. Computing, Server,Telecom, UPS and Solar.
    • Shop: reichelt elektronik
    • Price: 17.75 EUR excl. shipping

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