694 Results for : produces

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    DN3135N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,18 A, 1,3 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN3765K4-G - MOSFET, N-CH, DPAK, 650 V, 0,2 A, 2,5 W
    This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 650 V• RDS: 8 Ohm• Ugs (Off): -1,5 ... -3,5 V • Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 2.20 EUR excl. shipping
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    DN3535N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,2 A, 1,6 W
    DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 10 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 300 mA
    • Shop: reichelt elektronik
    • Price: 0.70 EUR excl. shipping
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    DN2530N8-G - MOSFET, N-CH, SOT-89, 300 V, 0,2 A, 1,6 W
    The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 300 V• RDS: 12 Ohm• Ugs: -1,0 ... -3,5 V
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping
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    DN3135K1-G - MOSFET, N-CH, SOT-23, 350 V, 0,18 A, 0,36 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.55 EUR excl. shipping
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    DN3545N8-G - MOSFET, N-CH, TO-89, 450 V, 0,2 A, 1,6 W
    These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 450 V• RDS: 20 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN2540N3-G - MOSFET, N-Kanal, 400 V, 0,15 A, Rds(on) 17 Ohm, TO-92
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 0.98 EUR excl. shipping
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    DN2540N5-G - MOSFET, N-CH, TO-220, 400 V, 0,15 A, 15 W
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 1.80 EUR excl. shipping
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    1MORE E1020BT Spearhead VR Bluetooth In-Ear Gaming Earphone Black
    Model: E1020BTType: In-EarMaterial: ABSConnectivity: WirelessFrequency response: 20-20000HzDriver type: DynamicSensitivity: 103dBSound channel: Two-channel (stereo)Connecting interface: Type-CCompatible with: iPhone,Mobile phoneNet Weight: 32 gCharging Time: 1 hourTalk Time: 6 hoursMusic Play Time: 6 hoursImpendence: 32 Ω Wireless Range: 10 mInput: 5V 1ABluetooth: Bluetooth V 4.2Bluetooth Protocol: HFP / A2DP / AVRCPPackage Contents: 1 x Pair of Earphones, 1 x Storage Bag, 3 x Pair of Eartips, 1 x USB Cable, 1 x English User Manual ● Dual Dynamic DriverA coaxial design allows two diaphragms to be placed on a single axis, meaning the two are face-to-face with an offset magnetic interference which ensures high sensitivity.A titanium diaphragm combined with a graphene composite diaphragm produces a precise and accurate soundstage● Environmental Noise CancellationOur proprietary ENC microphone technology filters out background noise so communication remains crystal clear no matter which environment you are in● Flexible Ergonomic HeadbandThe flexible ergonomic neckband is coated in a skin-friendly silicone that allows for extended gaming sessions without any fatigue or discomfort● Ultra Lightweight DesignEnjoy a lightweight yet durable earphone● Multiple Custom Lighting OptionsCustomizable lighting options allow you to control different lighting schemes● Fast Charge CapabilitiesFast charging capabilities let you play longer without taking as long of a break. 10 minutes of charging gets you 3 hours of gameplay
    • Shop: G2A
    • Price: 64.61 EUR excl. shipping
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    Love That Produces Hope
    Love That Produces Hope ab 35.99 € als Taschenbuch: The Thought of Ignacio Ellacuria. Aus dem Bereich: Bücher, Taschenbücher, Geist & Wissen,
    • Shop: hugendubel
    • Price: 35.99 EUR excl. shipping

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