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DN2540N3-G - MOSFET, N-Kanal, 400 V, 0,15 A, Rds(on) 17 Ohm, TO-92

DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA

Shop: reichelt elektronik
Price: 0.98 EUR excl. shipping

DN2540N5-G - MOSFET, N-CH, TO-220, 400 V, 0,15 A, 15 W

DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA

Shop: reichelt elektronik
Price: 1.80 EUR excl. shipping

Vowel Inherent Spectral Change

Vowel Inherent Spectral Change ab 149.99 € als Taschenbuch: Auflage 2013. Aus dem Bereich: Bücher, Taschenbücher, Naturwissenschaft,

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Price: 149.99 EUR excl. shipping

General Knowledge of Inherent Equality

General Knowledge of Inherent Equality ab 1.99 € als epub eBook: . Aus dem Bereich: eBooks,

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Price: 1.99 EUR excl. shipping

Kuryaeva:The optimum way of teaching En

Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: The optimum way of teaching English, Titelzusatz: The principle of inherent development (complication) of English grammar and the corresponding methods of English teaching, Autor: Kuryaeva, Rauza, Verlag: LAP Lambert Academic Publishing, Sprache: Englisch, Schlagworte: Ratgeber: Karriere und Erfolg // Bildungsberatung // Alphabetisierung in der Erwachsenenbildung: Handbuch // Lehrbuch // Rechenkompetenz in der Erwachsenenbildung: Handbuch, Rubrik: Briefe, Bewerbungen, Wiss. Arbeiten, Rhetorik, Seiten: 68, Informationen: Paperback, Gewicht: 118 gr, Verkäufer: averdo

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Price: 36.29 EUR excl. shipping

Your Inherent Creative Ability

Your Inherent Creative Ability ab 22.49 € als Taschenbuch: . Aus dem Bereich: Bücher, Taschenbücher, Geist & Wissen,

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Price: 22.49 EUR excl. shipping

Inherent and Instrumental Values

Inherent and Instrumental Values ab 46.99 € als epub eBook: Excursions in Value Inquiry. Aus dem Bereich: eBooks, Fachthemen & Wissenschaft, Sozialwissenschaften,

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Price: 46.99 EUR excl. shipping

DN2450K4-G - MOSFET, N-CH, DPAK, 500 V, 0,7 A, 2,5 W

These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 500 V• Ugs (off): -1,5 ... 3,5 V• RDS: 10 Ohm• Ic: 700 mA

Shop: reichelt elektronik
Price: 0.57 EUR excl. shipping